发明名称 |
Techniques for temperature controlled ion implantation |
摘要 |
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
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申请公布号 |
US7993698(B2) |
申请公布日期 |
2011.08.09 |
申请号 |
US20060525878 |
申请日期 |
2006.09.23 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
BLAKE JULIAN;ENGLAND JONATHAN;HOLDEN SCOTT;WALTHER STEVEN R.;LIEBERT REUEL;MUKA RICHARD S.;JEONG UKYO;LIU JINNING;SHIM KYU-HA;MEHTA SANDEEP |
分类号 |
C23C16/48;C23C14/48;C23C14/52;C23C14/54;C23C16/52 |
主分类号 |
C23C16/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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