| 摘要 |
Disclosed is a plasma processing apparatus which comprises: an electrode flange (4); a chamber (2) having an inner wall surface (34); an insulating flange (31) arranged between the electrode flange (4) and the chamber (2); a base member (3) which has a lateral surface (32) and is arranged within the chamber (2), and on which a substrate (10) is placed; an RF power supply (9) which is connected to the electrode flange (4) and applies a high-frequency voltage thereto; and insulating members (41, 42) which are arranged on at least either the lateral surface (32) of the base member (3), which faces the inner wall surface (34), or the inner wall surface (34), which faces the lateral surface (32) of the base member (3). |
