发明名称 TWO-PLANE ERROR CORRECTION METHOD FOR A MEMORY DEVICE AND THE MEMORY DEVICE THEREOF
摘要 In order to correct errors of a first page on one plane in a two-plane NAND flash memory, use data of a second page on another plane to mix the encoding and leverage the error correction code of the first page. Each of the error correction codes of the first page and the second page is divided into an inner correction code and a cross correction code. The inner correction codes are used to correct errors of their own pages and the cross correction codes are used to correct errors of two distinct groups, grouped from the even and odd bytes of the two pages respectively. The second page, with fewer errors, is therefore used to enhance the correcting ability of the first page, without lengthening the error correction code of the first page.
申请公布号 US2011191651(A1) 申请公布日期 2011.08.04
申请号 US20100770767 申请日期 2010.04.30
申请人 CHEN TSUNG-HENG;CHEN TSANG-YI;CHIU CHIH-HENG;SHU CHUNG-WON 发明人 CHEN TSUNG-HENG;CHEN TSANG-YI;CHIU CHIH-HENG;SHU CHUNG-WON
分类号 H03M13/29;G06F11/10 主分类号 H03M13/29
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