MEASUREMENT METHOD OF JUNCTION TEMPERATURE OF HIGH EFFICIENCY LIGHT EMITTING DIODE MODULE WITH ANALYSIS OF SINGLE PACKAGE PROPERTIES IN HIGH EFFICIENCY LIGHT EMITTING DIODE

摘要

PURPOSE: A method for measuring the junction temperature of high power light emitting diode module with the analysis of single package properties is provided to analyze the temperature(junction temperature) of the average junction part to each light emitting diode by measuring only voltage in a module state and measures the temperature(junction temperature) of a junction part inside the light emitting diode through voltage change according to the change of external temperature in a single light emitting diode package. CONSTITUTION: Relation between external temperature and a voltage at a perception current is identified by measuring voltage with the change of external temperature in a light-emitting diode package including the same light emitting diode as the light emitting diode comprising high power light emitting diode module(S1). The change of voltage is measured in specific external temperature while a driving current and a perception current are consecutively and alternately applied, a driving current is applied for a first time interval, and the perception current is applied for a second time interval(S2). Difference(ΔV) between a minimum value and a maximum value is calculated among these values by separating the values of the voltage in case of applying the perception current among data obtained from S2(S3). A temperature variation value(ΔT/ΔV) about voltage change is obtained from data obtaining from S1(S4). TheΔV obtained from S3 and theΔT/ΔV obtained from S4 are multiplied and the external temperature is added and then the temperature of the P-N junction in the light emitting diode at the corresponding external temperature is measured(S5).