| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a gate insulating film of high electric charge mobility, which is formed by employing a simple film formation method such as spin coating or printing, and also to provide a composition for forming the film, and a good organic thin-film transistor that uses the gate insulating film. <P>SOLUTION: As a gate insulating film formation composition, an epoxy resin curing composition is used which contains a polyamide compound having a structure containing a phenolic hydroxyl group represented by a general formula (I) or (II) in a repeating unit. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
