| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To easily and precisely inspect a double-sided electrode semiconductor device when detecting weak emission occurring following abnormal operation of the semiconductor device. <P>SOLUTION: The semiconductor device 1 is made of a semiconductor material for transmitting light having a wavelength of 360-2,500 nm, and includes a first electrode 2 made of metal on one surface and a second electrode 3 made of the semiconductor material itself on the other surface. The degree of overlapping of four images, namely an image 2a of the first electrode and an image 11a of a first probe seen via the semiconductor device 1 and images of the second electrode 3 and a second probe 12, is recognized by an imaging means 30 provided on the other surface of the semiconductor device 1. A sectional area of the first probe 11 is made larger than that of the first electrode 2. The second probe 12 is separated from the image of the first electrode, and an emission state of the semiconductor device 1 is detected as an emission image by the imaging means 30. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
