| 摘要 |
A data storage device (2) comprising a plurality of stacked layers (4) of memory cells (6) is disclosed. Each memory cell comprises a first magnetic layer (5), including an elongate curved portion (10), and a second magnetic layer. The first magnetic layer is adapted to be selectively magnetised to adopt one of a plurality of possible magnetised states, wherein the electrical resistance between the first magnetic layer and the second magnetic layer has a magnitude dependent upon the magnetised state of said first magnetic layer. Switching means is adapted to cause the first magnetic layer to switch between magnetised states thereof.
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