CONTROLLED SWITCHING MEMRISTOR

摘要

A controlled switching memristor (100) includes a first electrode (102), a second electrode (104), and a switching layer (106) positioned between the first electrode (102) and the second electrode (104). The switching layer (106) includes a material configured to switch between an ON state and an OFF state, in which at least one of the first electrode (102), the second electrode (104), and the switching layer (106) is configured to generate a permanent field within the memristor (100) to enable a speed and an energy of switching from the ON state to the OFF state to be substantially symmetric to a speed and energy of switching from the OFF state to the ON state.