发明名称 |
Phase Changeable Memory Devices and Methods of Forming the Same |
摘要 |
Phase changeable memory devices are provided including a mold insulating layer on a substrate, the mold insulating layer defining an opening therein. A phase-change material layer is provided in the opening. The phase-change material includes an upper surface that is below a surface of the mold insulating layer. A first electrode is provided in the opening and on the phase-change material layer. A spacer is provided between a sidewall of the mold insulating layer and the phase-change material layer and the first electrode. The upper surface of the first electrode is coplanar with the surface of the mold insulating layer. Related methods are also provided.
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申请公布号 |
US2011186798(A1) |
申请公布日期 |
2011.08.04 |
申请号 |
US201113019822 |
申请日期 |
2011.02.02 |
申请人 |
KWON HYUN-SUK;PARK HYEYOUNG;PARK JEONGHEE;OH GYUHWAN;OH JINHO;PARK DOO-HWAN |
发明人 |
KWON HYUN-SUK;PARK HYEYOUNG;PARK JEONGHEE;OH GYUHWAN;OH JINHO;PARK DOO-HWAN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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