| 摘要 |
A semiconductor device according to the present invention includes a semiconductor substrate of a first conductivity type having a top surface and a rear surface, a semiconductor layer of a second conductivity type formed on the top surface of the semiconductor substrate, having a top surface and a rear surface, and having the rear surface in contact with the top surface of the semiconductor substrate, a body region of the first conductivity type formed in a top layer portion of the semiconductor layer, a first impurity region of the second conductivity type formed in a top layer portion of the semiconductor layer and spaced apart from the body region, a second impurity region of the second conductivity type formed in a top layer portion of the body region and spaced apart from a peripheral edge of the body region, a gate electrode formed on the semiconductor layer and opposed to a portion between the peripheral edge of the body region and a peripheral edge of the second impurity region, a field insulating film formed in a portion of the top surface of the semiconductor layer between the body region and the first impurity region, and a plurality of field plates formed on the field insulating film and spaced apart from each other, and a spacing between adjacent field plates decreases as the body region is approached from the first impurity region.
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