| 摘要 |
PROBLEM TO BE SOLVED: To uniformly perform a development process using a low-temperature developer to appropriately form a predetermined pattern on a substrate. SOLUTION: First, a substrate is mounted on a cooling plate having been subjected to temperature adjustment at 15°C to be cooled in a cooling device (step S1). Thereafter, a rinse agent at 3°C is supplied to the substrate to cool the substrate in a development device (step S2). Thereafter, a developer at 3°C is supplied onto the substrate to develop a resist film on the substrate to form a resist pattern on the resist film (step S3). Thereafter, the rinse agent at 3°C is supplied onto the substrate to clean the surface of the substrate (step S4). Thereafter, a treatment liquid at 3°C is supplied onto the substrate to lower surface tension of the rinse agent on the resist pattern of the substrate (step S5). COPYRIGHT: (C)2011,JPO&INPIT |
