发明名称 METHOD OF MANUFACTURING A SUBSTRATE FOR A MASK BLANK, METHOD OF MANUFACTURING A MASK BLANK, METHOD OF MANUFACTURING A TRANSFER MASK , AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 In a simulation step, based on information of a main surface shape of a transparent substrate and shape information of a mask stage of an exposure apparatus and using a deflection differential equation taking into account a twist deformation, height information at a plurality of measurement points is obtained by simulating a state where the transparent substrate is set in the exposure apparatus. Based on the height information obtained through the simulation, a flatness of the transparent substrate when it is set in the exposure apparatus is calculated in a flatness calculation step. Then, by judging in a selection step whether or not the calculated flatness satisfies a specification, the transparent substrate whose flatness satisfies the specification is used as a substrate for a mask blank.
申请公布号 US2011189595(A1) 申请公布日期 2011.08.04
申请号 US201113016645 申请日期 2011.01.28
申请人 HOYA CORPORATION 发明人 TANABE MASARU
分类号 C03B20/00;C03C19/00;G03F1/50;G03F1/60;G03F7/20 主分类号 C03B20/00
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