发明名称 |
Phase change memory device generating program current and mehtod thereof |
摘要 |
A phase change memory device may include a memory cell array, a write driver, and/or a control unit. The memory cell array may include a plurality of memory cells. The write driver may be configured to provide a program current to the memory cell array for setting a state of a phase change material to program a selected memory cell. The write driver may be configured to provide the program current such that the program current has a plurality of steps. The control unit may be configured to receive step information for adjusting a magnitude and a width of each step of the program current during a test operation and provide the step information to the write driver during a normal operation.
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申请公布号 |
US2011188303(A1) |
申请公布日期 |
2011.08.04 |
申请号 |
US201113064672 |
申请日期 |
2011.04.07 |
申请人 |
CHO BEAK-HYUNG;CHO WOO-YEONG;PARK MU-HUI |
发明人 |
CHO BEAK-HYUNG;CHO WOO-YEONG;PARK MU-HUI |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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