SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device and a substrate processing apparatus are provided to offer a good nitride titan film compared with a nitride titan film formed an ALD way and to process with a low substrate temperature compared with a CVD way. CONSTITUTION: A process chamber accepts a plurality of substrates by laminating. A first processing gas supply system supplies a first process gas to the process chamber. A second processing gas supply system supplies a second process gas to the process chamber. A controller controls the first processing gas supply system and the second processing gas supply system. One between the first processing gas supply system and the second processing gas supply system comprises a kind of nozzles which is different a laminated shape according to the laminating direction.