| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device not necessary to secure a high embedding property while manufactured using a simple process, and to provide a method for manufacturing the semiconductor device. <P>SOLUTION: In the method for manufacturing the semiconductor device, a semiconductor substrate SUB is prepared first, wherein the semiconductor substrate SUB has a configuration formed by stacking a support substrate SS, a buried insulating film BOX, and a semiconductor layer SL, in this order. Then, an element having a conductive portion is completed on the main surface of the semiconductor layer SL. A trench DTR surrounding the element in a planar view is formed to reach the buried insulating film BOX from the main surface of the semiconductor layer SL. A first insulating film (an interlayer dielectric II) is formed on the element and in the trench DTR to cover the element and form a hollow space in the trench DTR, respectively. Then, a contact hole CH that is a hole reaching the conductive portion of the element is formed in the first insulating film. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
