| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a film formation chamber by a high-purity member excelling in mechanical strength, in a film formation device for a semiconductor thin film or the like. SOLUTION: A film formation chamber is manufactured using a hybrid member with a quartz plate material and a metal member integrated with each other. The hybrid member is made by subjecting the quartz plate material to vacuum suction to the metal member, and the film formation chamber is assembled so that the quartz plate material side of the hybrid member becomes the inner surface of the film formation chamber. The inner surface of the film formation chamber in contact with a material gas becomes a quartz surface, and a metal surface covered with the quartz plate material is isolated from the inside of the film formation chamber, whereby influence of a gas discharged from the metal member can be suppressed. The outer shell of the film formation chamber is formed with the metal member, thereby excelling in mechanical strength. Since the assembly or the like of the film formation chamber can be performed in the state where the quartz plate material is integrated with the metal member, the risk of breakage of the quartz plate material can be reduced. COPYRIGHT: (C)2011,JPO&INPIT
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