| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor device which forms a window structure after keeping a basic characteristic of a laser without degrading contact resistance between an electrode and a semiconductor layer by preventing deterioration of an epitaxial growth film due to a heat treatment in window region formation. SOLUTION: A ZnO film 8 being a solid-phase diffusion source is formed on an entire surface on a p-type GaN contact layer 7, and thereafter a SiO<SB>2</SB>film 20 being a diffusion suppression film is formed in a predetermined region on the ZnO film 8. By performing a heat treatment in an atmosphere containing oxygen, impurity atoms are selectively diffused from the ZnO film 8 to a region including an active region 4, thereby the bandgap of the active layer 4 is selectively expanded while keeping crystallinity, and an optical non-absorptive window region 14 is formed in a resonator end face part. COPYRIGHT: (C)2011,JPO&INPIT
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