PROCESS FOR PRODUCING SILICON OXIDE THIN FILM OR SILICON OXYNITRIDE COMPOUND THIN FILM AND THIN FILM OBTAINED BY THE PROCESS

摘要

Disclosed is a process for producing a silicon oxide or silicon oxynitride thin film having a high level of water vapor and oxygen barrier property and a high strength with a higher efficiency by a solution process which is advantageous in productivity. Also disclosed is a thin film that is obtained by the process and is useful, for example, as a protective film for electric elements such as organic EL elements. A solution containing a smectite group silicate layered compound and a silazane compound is coated onto a surface of a substrate by a liquid phase process to form a film. The thin film thus obtained is exposed to ultraviolet light under an oxygen atmosphere to produce a silicon oxide thin film or a silicon oxynitride compound thin film containing the smectite group silicate layered compound. The smectite group silicate compound is a material represented by the following general formula. A1/3BmSi4O10.nH2O  [Chemical Formula 1]