| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a constitution of a high voltage switch circuit in which write-in and erase can be performed by controlling high voltage with a signal level of power source voltage amplitude inputted to a high voltage switch circuit of a nonvolatile semiconductor memory. SOLUTION: This nonvolatile semiconductor memory has a high voltage switch circuit 11 constituted of a first inverter 18 operated by first power source and a second inverter 24 operated by second power source voltage, a transistor by which the first inverter and the second inverter are connected and in which the second power source voltage of the second inverter is fed back to an input of the second inverter, a transistor for applying a reference potential to an input of the second inverter, and a transistor for applying a reference potential to an output of the second inverter.</p> |
