发明名称 |
Method and apparatus for electrochemical plating semiconductor wafers |
摘要 |
A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of vias is achieved by applying a static charge on the wafer before it is immersed in the bath, in order to enhance bath accelerators used to control the plating rate. The static charge is applied to the wafer using a supplemental electrode disposed outside the plating bath.
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申请公布号 |
US7988843(B2) |
申请公布日期 |
2011.08.02 |
申请号 |
US20100705903 |
申请日期 |
2010.02.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHUNG-LIANG;SHUE SHAU-LIN |
分类号 |
C25D5/34 |
主分类号 |
C25D5/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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