发明名称 |
OVER WRITABLE NONVOLATILE MEMORY DEVICE AND DATA WRITE METHOD THEREOF |
摘要 |
<p>PURPOSE: A non-volatile memory device and data writing method thereof are provided to generate parity corresponding to overwriting data and to overwrite a memory. CONSTITUTION: It is determined whether to decode a program command(S120). If a command is determined as an overwriting command, data in cell area is read out(S150). A parity bit is generated by combining overwriting data(S160). Overwriting data and parity bit are written in a cell area(S170).</p> |
申请公布号 |
KR20110087036(A) |
申请公布日期 |
2011.08.02 |
申请号 |
KR20100006476 |
申请日期 |
2010.01.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEO, HUI KWON;KIM, SEI JIN |
分类号 |
G06F9/30;G06F12/00 |
主分类号 |
G06F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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