发明名称 OVER WRITABLE NONVOLATILE MEMORY DEVICE AND DATA WRITE METHOD THEREOF
摘要 <p>PURPOSE: A non-volatile memory device and data writing method thereof are provided to generate parity corresponding to overwriting data and to overwrite a memory. CONSTITUTION: It is determined whether to decode a program command(S120). If a command is determined as an overwriting command, data in cell area is read out(S150). A parity bit is generated by combining overwriting data(S160). Overwriting data and parity bit are written in a cell area(S170).</p>
申请公布号 KR20110087036(A) 申请公布日期 2011.08.02
申请号 KR20100006476 申请日期 2010.01.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEO, HUI KWON;KIM, SEI JIN
分类号 G06F9/30;G06F12/00 主分类号 G06F9/30
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