发明名称 |
Trench MOSFET with trenched floating gates as termination |
摘要 |
A trench MOSFET comprising a plurality of transistor cells with a plurality of wide trenched floating gates as termination region is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in termination area. Each body region between two adjacent said trenched floating gates has floating voltage.
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申请公布号 |
US7989887(B2) |
申请公布日期 |
2011.08.02 |
申请号 |
US20090591467 |
申请日期 |
2009.11.20 |
申请人 |
FORCE MOS TECHNOLOGY CO., LTD. |
发明人 |
HSIEH FU-YUAN |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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