ELECTROCHEMICALLY-GATED TRANSISTOR AND A METHOD FOR ITS MANUFACTURE

摘要

The present invention relates to an electrochemically-gated transistor on a substrate, comprising a source electrode (1), a drain electrode (2), a gate electrode (3), and a transistor channel (4) which is located between the source electrode (1) and the drain electrode (2). A predominantly ionic conductor is provided as an electrolyte (5) which covers the transistor channel (4), which comprises nanoparticles of an inorganic semiconductor. Either the electrolyte (5) covers the gate electrode (3) only to a partial extent or the gate electrode (3), which covers the electrolyte (5), completely covers the transistor channel (4). The present invention further relates to a method for manufacturing such an electrochemically-gated transistor. Such a device is a printable, inorganic nanoparticle-channel field-effect transistor which works like an n-channel enhancement- mode MOSFET (NMOS) as a normally-off device.