METHOD OF MANUFACTURING NITRIDE BASED LIGHT EMITTING DEVICE USING PATTERNED LATTICE BUFFER LAYER

摘要

PURPOSE: A method for manufacturing a nitride based light emitting device using a patterned lattice buffer layer is provided to not only reduce the density of dislocation, which is generated in the growth of the nitride, but also form an air gap in the growth of the nitride. CONSTITUTION: A patterned ZnO lattice buffer layer is formed after ZnO is evaporated on a substrate and the evaporated znO is etched into a predetermined pattern. A rest nitride layers are formed on the first nitride layer after the first nitride layer is formed on the patterned ZnO lattice buffer layer. The rest nitride layers are formed in the hydrogen gas atmosphere. The whole of a part of patterned ZnO lattice buffer layer is etched by the hydrogen gas when the rest nitride layers is formed and then an air gap(120b) is formed in an etched part.