The present invention relates to a lithography method using tilted evaporation, and includes: (1) coating a resist on top of a substrate; (2) patterning the resist using a lithography process; (3) tilt-evaporating a first thin film material on an upper layer of the patterned resist to form a modified pattern mask; (4) evaporating a second thin film material on the top of the substrate with the modified mask pattern; and (5) removing the resist coated on the top of the substrate.
申请公布号
WO2011090262(A2)
申请公布日期
2011.07.28
申请号
WO2010KR07902
申请日期
2010.11.10
申请人
KOREA RESEARCH INSTITUTE OF BIOSCIENCE AND BIOTECHNOLOGY;SHIN, YONG BEOM;LEE, SEUNG WOO