| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve electric characteristics of a transistor by controlling the value of physical properties of an oxide semiconductor layer, because the field of oxide semiconductors has begun to attract attention in recent years and therefore the correlation between electric characteristics of the transistor including the oxide semiconductor layer and the value of physical properties of the oxide semiconductor layer does not clear yet. <P>SOLUTION: A semiconductor device includes at least a gate electrode 200, an oxide semiconductor layer 410, and a gate insulating layer 300 sandwiched between the gate electrode and the oxide semiconductor layer, wherein the oxide semiconductor layer has a relative permittivity equal to or higher than 13 (or equal to or higher than 14). <P>COPYRIGHT: (C)2011,JPO&INPIT |
