| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory system including a large capacity ROM and RAM in which high speed read and write are enabled. <P>SOLUTION: The memory system includes a nonvolatile memory (CHIP1), DRAM (CHIP3), a control circuit (CHIP2), and an information processing device (CHIP4). FLASH data are transferred in advance to the SRAM and DRAM, thereby increasing the speed. Data transfer between the nonvolatile memory (FLASH) and DRAM (CHIP3) is performed in the back ground. The memory system including these chips is configured as a memory system module in which respective chips are layered on one another and wired by bonding in the ball grid array (BGA) and between the chips. A region for copying Flash data is reserved in the DRAM and the data are transferred to the DRAM in advance immediately after power is turned on or by the load instruction, so that the FLASH data are read out at the same speed as the DRAM. Thus, the performance and function of mobile devices is improved. <P>COPYRIGHT: (C)2011,JPO&INPIT |
