| 摘要 |
A semiconductor device includes an n-type semiconductor substrate, an alternating conductivity type layer on semiconductor substrate, the alternating conductivity type layer including n-type drift regions and p-type partition regions arranged alternately, p-type channel regions on the alternating conductivity type layer, and trenches formed from the surfaces of the p-type channel regions down to respective n-type drift regions or both the n-type drift regions and the p-type partition regions. The bottom of each trench is near or over the pn-junction between the p-type partition region and the n-type drift region. The semiconductor device facilitates preventing the on-resistance from increasing, obtaining a higher breakdown voltage, and reducing the variations caused in the characteristics thereof.
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