发明名称 METHODS FOR REDUCING THE DEPOSITION OF SILICON ON REACTOR WALLS USING PERIPHERAL SILICON TETRACHLORIDE
摘要 <p>Fluidized bed reactor systems and distributors are disclosed as well as processes for producing polycrystalline silicon from a thermally decomposable silicon compound such as trichlorosilane. The processes generally involve reduction of silicon deposits on reactor walls during polycrystalline silicon production by use of a silicon tetrahalide.</p>
申请公布号 WO2011090689(A1) 申请公布日期 2011.07.28
申请号 WO2010US62088 申请日期 2010.12.23
申请人 MEMC ELECTRONIC MATERIALS, INC.;ERK, HENRY, FRANK 发明人 ERK, HENRY, FRANK
分类号 B01J8/02;B01J8/18;B01J8/24;C01B33/03;C01B33/107;F23C10/20;F23D14/22;F27B15/10 主分类号 B01J8/02
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