| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III element nitride semiconductor laser element having a laser resonator with a high oscillation yield on a semipolar face of a support base body in which a c-axis of hexagonal group III element nitride is inclined in the m-axis direction. SOLUTION: First and second divided cross sections 27, 29 to form the laser resonator intersect with an m-n face. The group III element nitride semiconductor laser element 11 has a laser waveguide extending in a direction of a line of intersection between the m-n face and the semipolar face 17a. For this reason, it is enabled to make use of light emission by a band transition allowing a low threshold current. In a laser structure 13, a first face 13a is opposite to a second face 13b. The first and second divided cross sections 27, 29 extend from an edge 13c of the first face 13a to an edge 13d of the second face 13b. The divided cross sections 27, 29 are not formed by dry etching and are different from conventionally-employed cleavage planes such as the c-face, m-face, or a-face. COPYRIGHT: (C)2011,JPO&INPIT
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