METHOD FOR PROCESSING OF SEMICONDUCTOR CRYSTAL BODY, AND DEVICE FOR PROCESSING OF SEMICONDUCTOR CRYSTAL BODY

摘要

Disclosed is a method for processing of semiconductor crystal bodies that facilitates processing at lower temperatures than previously possible. The method comprises the steps of preparing a semiconductor crystal body (1); clamping the semiconductor crystal body (1) with a pair of pressure applying work tools (2, 3) (an upper punch 2, a lower punch 3) that are made from a material that is primarily a conductive material; heating the semiconductor crystal body by self-heating, by applying electrical pulses between the pair of pressure applying work tools, to a target temperature greater than or equal to a temperature whereat the semiconductor crystal body may be plastically deformed by applying pressure, and which is below the melting point of the semiconductor crystal body; and applying pressure between the pair of pressure applying work tools (2, 3), forming the semiconductor crystal body into a target shape by plastically deforming the semiconductor crystal body while maintaining the target temperature of the semiconductor crystal body by continuously applying electrical pulses between the pair of pressure applying work tools (2, 3).