MAGNETIC TUNNEL JUNCTION ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a magnetic tunnel junction element exerting a better magnetization characteristic, coping with the need for high recording density and high integration, and having a high reliability.

SOLUTION: An MTJ (magnetic tunnel junction) element includes in sequence: a lower magnetic shield layer 110 including NiFe and performing as a base body having a planarized upper surface; a covering layer 125 including Ta and with its surface layer made amorphous by a sputter etching process; a seed layer 140; a pinning layer 50; a pinned layer 60; a tunnel barrier layer 70 with an Al film oxidation treated; a magnetization free layer 80; a cap layer 90; and an upper magnetic shield layer 100 including NiFe and to be a current pathway for passing sense current in the direction orthogonal to a lamination layer together with the lower magnetic shield layer 110.

COPYRIGHT: (C)2011,JPO&INPIT