| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a lead electrode has a low resistive value and it is hard to form a parasitic capacitance around the lead electrode, and also to provide a method of manufacturing the semiconductor device. <P>SOLUTION: A semiconductor device 100 includes a base substrate B4 which is made of silicon and has a plurality of base semiconductor regions Bs isolatedly separated, the semiconductor regions Bs being formed in a predetermined zone R1 of an upper surface layer. The semiconductor device also includes a cap substrate C4 which is made of silicon and bonded at its lower surface on the upper surface of the base substrate B4 in the predetermined zone R1 of the base substrate B4. A lead electrode De1 is connected at its lower surface to the base semiconductor regions Bs, passed through the cap substrate C4, extended at its upper surface up to the upper surface of the cap substrate C4, and made of a metal 40. The lead electrode De1 has a groove 35 between the electrode and the cap substrate C4. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
