发明名称 |
MASK BLANK, MASK BLANK MANUFACTURING METHOD, TRANSFER MASK, AND TRANSFER MASK MANUFACTURING METHOD |
摘要 |
According to certain embodiments, a mask blank for an electron beam writing is provided, capable of forming a resist pattern of a 3-dimensional topology through an one-time writing. The mask blank includes a substrate, a thin film formed on the substrate, and an electron beam resist film formed on the thin film. The electron beam resist film is made of a laminated film including at least a lower resist film and an upper resist film. The lower resist film and the upper resist film have different resist sensitivities with respect to an electron beam.
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申请公布号 |
US2011183240(A1) |
申请公布日期 |
2011.07.28 |
申请号 |
US20100973046 |
申请日期 |
2010.12.20 |
申请人 |
HOYA CORPORATION |
发明人 |
HASHIMOTO MASAHIRO;SHIROTORI HIROSHI;HONMA YUUSUKE;SHIRAKURA MITSUHIRO |
分类号 |
G03F1/50;G03F1/68;H01L21/027 |
主分类号 |
G03F1/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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