SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device wherein each of the unit cells is provided with: a silicon carbide semiconductor layer (102) disposed on the main surface of a semiconductor substrate (101); a second conductivity type body region (103) disposed in the silicon carbide semiconductor layer; a first conductivity type region (104) positioned in the body region; and a first conductivity type channel layer (106), which is configured of a silicon carbide semiconductor, and which is disposed on the silicon carbide semiconductor layer by being in contact with the body region. In the silicon carbide semiconductor layer, the region positioned between the body regions of the two adjacent unit cells configures a JFET region (102j), and in a channel layer portion positioned between the body region and the gate electrode, a first conductivity type high-concentration impurity region (106b) is disposed, and in a channel layer portion positioned on the JFET region, a first conductivity type low-concentration impurity region (106a) is disposed. Thus, the intensity of an electrical field close to the JFET region is suppressed, while ensuring characteristics, such as a threshold voltage, and reliability of a device is improved.