发明名称 FACE-UP TYPE OPTICAL SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem, wherein the distance between the auxiliary electrode section of a p-side electrode and that of an n-side electrode becomes larger than the current diffusion distance, thus producing a weak light-emitting region, and accordingly, making the light emission distribution nonuniform. <P>SOLUTION: The p-side electrode 6 consists of a pad part 61 and auxiliary electrode sections 62a, 62b, and 62c, whereas the n-side electrode 7 consists of a pad part 71 and auxiliary electrode sections 72a and 72b. The thickness of the transparent electrode layer 5' of the region where the distance of the auxiliary electrode sections 62a, 62b, and 62c and the auxiliary electrode sections 72a and 72b, arranged in parallel is d1, is set as x(n-1)+T<SB>min</SB>(n=1, 2, ...) and the thickness of the transparent electrode sections 5' of the regions R1', R2', R3', and R4' where the distances of the auxiliary electrode sections 62a, 62b, and 62c and the auxiliary electrode sections 72a and 72b are larger than d1, i.e., d2, is made as thick as x(m+T<SB>min)</SB>(with m=1, 2, ...) (m>n-1), and where, T<SB>min</SB>is a minimum thickness of the transparent electrode 5' causing no optical interference; and x is a cycle for the thickness of the transparent electrode that would not cause optical interference. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011146561(A) 申请公布日期 2011.07.28
申请号 JP20100006684 申请日期 2010.01.15
申请人 STANLEY ELECTRIC CO LTD 发明人 KUMAGAI MITSUYASU;MOGI MASAHIKO
分类号 H01L33/42;H01L33/32 主分类号 H01L33/42
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