| 摘要 |
High-quality, metastable SiGe alloys are formed on SOI substrates having an SOI layer of about 500 Å or less, the SiGe layers can remain substantially fully strained compared to identical SiGe layers formed on thicker SOI substrates and subsequently annealed and/or oxidized at high temperatures. The present invention thus provides a method of 'frustrating' metastable strained SiGe layers by growing them on thin, clean and high-quality SOI substrates. |
