| 摘要 |
FIELD: physics. ^ SUBSTANCE: described is novel assembling of semiconductor devices combined with optically active compositions. In particular, light-emitting semiconductors based on an InGaN structure, combined with highly efficient optically active langasite crystals La3Ga5SiO14. When activating the langasite, said composition interacts with radiation of the InGaN structure. The langasite absorbs high-energy photons emitted by the InGaN structure, and re-emits light with longer wavelength. Short-wave, high-energy radiation of the InGaN structure is mixed with longer wavelength radiation of the optically active composition and forms a wide spectrum which is perceived by a viewer as white light. ^ EFFECT: design of a wideband light source based on semiconductor structures, where a langasite photoluminescent phosphor with high radiation excitation efficiency, characteristic of InGaN light-emitting diodes, re-emits light in the middle range of the visible spectrum. ^ 19 cl, 4 tbl, 2 dwg |
