| 摘要 |
After an n-type AlGaN barrier layer (3) is formed over a substrate (1), an n-type GaN contact layer (4) is formed over the n-type AlGaN barrier layer (3). Next, the n-type GaN contact layer (4) is wet-etched with using an etching solution containing an organic alkali agent and an oxidizer while the n-type GaN contact layer (4) is irradiated with an ultraviolet illumination.
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