| 摘要 |
A semiconductor device 100 includes a first gate 210, which is formed using a gate last process. The first gate 210 includes a gate insulating film formed in a bottom surface in a first concave portion formed in the insulating film; a gate electrode formed over the gate insulating film in the first concave portion; and a protective insulating film 140 formed on the gate electrode in the first concave portion. In addition, the semiconductor device 100 includes a contact 134, which is coupled to the N-type impurity-diffused region 116a in the both sides of the first gate 210 and is buried in the second concave portion having a diameter that is large than the first concave portion.
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