发明名称 |
Semiconductor device with STI and method for manufacturing the semiconductor device |
摘要 |
A semiconductor device includes: a semiconductor substrate having first and second areas; an STI isolation region being made of an isolation trench formed in the semiconductor substrate and an insulating film burying the isolation trench and defining a plurality of active regions in the first and second areas; a first structure formed on an area from the active region in the first area to a nearby STI isolation region and having a first height; and a second structure formed on an area from the active region in the second area to a nearby STI isolation region and having a second height, wherein the surface of the said STI isolation region in the first area is lower than the surface of said STI isolation region in the second area.
|
申请公布号 |
US7986015(B2) |
申请公布日期 |
2011.07.26 |
申请号 |
US20080343831 |
申请日期 |
2008.12.24 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
EMA TAIJI;MIZUTANI KAZUHIRO |
分类号 |
H01L25/065 |
主分类号 |
H01L25/065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|