发明名称 SEMICONDUCTOR DEVICE STRUCTURES INCLUDING TRANSISTORS WITH ENERGY BARRIERS ADJACENT TO TRANSISTOR CHANNELS AND ASSOCIATED METHODS
摘要 A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed.
申请公布号 KR20110085002(A) 申请公布日期 2011.07.26
申请号 KR20117014303 申请日期 2009.11.19
申请人 MICRON TECHNOLOGY, INC. 发明人 MOULI CHANDRA V.
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
代理机构 代理人
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