| 摘要 |
It is possible to eliminate the defect that a long time is required for writing into a semiconductor memory card by resulting from the fact, with enlargement of its capacity, that the external data management size is different from the internal data management size in the semiconductor memory card. A partial physical block corresponding to the size managed externally is used regardless of the size of the physical block in a non-volatile memory device. Data are written in the partial physical block unit and an erase block is assured in the physical block unit, thereby enabling the write rate to be increased.
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