发明名称 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE |
摘要 |
The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm.
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申请公布号 |
US2011175057(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US201113009045 |
申请日期 |
2011.01.19 |
申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
TAMURA WATARU;SASAKI CHIHARU |
分类号 |
H01L33/06 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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