<p>The present invention relates to a polysilicon deposition apparatus, which comprises: a reactor on which a gas inlet port for injecting reaction gas and a gas outlet port for discharging gas to the outside are formed; an electrode unit which is installed in the reactor and comprises a first electrode and a second electrode spaced apart from each other by a predetermined distance; a silicon core rod which receives current from the first electrode of the electrode unit, enables the current to flow to the second electrode of the electrode unit, and independently generates heat; a plurality of nozzles which enables the reaction gas injected through the gas inlet port of the reactor to flow toward the silicon core rod; a gas spray unit comprising a gas supply pipe, which is connected to the gas inlet port of the reactor and supplies gas to the nozzles; and a gas supply pipe driving unit which rotates the gas supply pipe of the gas spray unit to the right and to the left.</p>
