| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of cleaning a film formation device that can speedily remove deposits on a member provided in the vicinity of an outer periphery of an electrode as well as deposits on the electrode. <P>SOLUTION: In response to change in plasma state, a transition is made from a process of generating plasma under a first condition to a process of generating plasma under a second condition. Under the second condition, the plasma is spread in a direction toward an outer periphery between a first pair of electrodes 11 and 12 as compared with the first condition. In response to variation in circuit constant of an impedance matching circuit 41 connected to the first pair of electrodes 11 and 12, a transition is made from the process of generating the plasma under the first condition to the process of generating the plasma under the second condition. Under the first and second conditions, a mixed gas of an Ar gas and an NF<SB>3</SB>gas is used. Under the second condition, a flow rate ratio is high which is the ratio of an Ar gas flow rate to an NF<SB>3</SB>gas flow rate. <P>COPYRIGHT: (C)2011,JPO&INPIT |
