| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-yield, high-reliability semiconductor device by preventing a porous insulating film where wiring is formed from receiving plasma damage etc. SOLUTION: A method of manufacturing the semiconductor device includes a step of depositing a hole forming agent-containing film having a plurality of regions differing in carbon concentration, hole forming agent concentration, and oxygen concentration, on a semiconductor substrate by a chemical vapor deposition method. The process includes: a first period during which a precursor, the hole forming agent and an oxidant are supplied at a first flow rate; a second period during which the flow rate of the hole forming agent with respect to the flow rate of the precursor is reduced after the first period; a third period during which reduction in the flow rate of the hole forming agent with respect to the flow rate of the precursor is stopped and the precursor, hole forming agent and oxidant are supplied at a second flow rate after the second period; a fourth period during which the flow rate of the oxidant with respect to the flow rate of the precursor is increased after the third period; and a fifth period during which the precursor, hole forming agent and oxidant are supplied at a third flow rate after the fourth period. COPYRIGHT: (C)2011,JPO&INPIT
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