| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a high yield by improving redundancy of vias without impairing the refining of the semiconductor device. SOLUTION: The semiconductor device includes first wiring 211a formed on a semiconductor substrate; third wiring 231a formed at a layer higher than the first wiring 211a; and a first via 221a connecting the first wiring 211a to the third wiring 231a. A space t1 between the formed position of the first via 221a and the end of the third wiring 231a is smaller than a space between the formed position of a second via that connects second wiring to fourth wiring at a layer higher than the second wiring, and the end of the fourth wiring. A cross sectional area of the first via 221a in a direction parallel with the semiconductor substrate is larger than a cross-sectional area of the second via in a direction parallel with the semiconductor substrate. COPYRIGHT: (C)2011,JPO&INPIT
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