TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE COMPRISING TRANSISTOR

摘要

PURPOSE: A transistor, a manufacturing method thereof, and an electronic device including the same are provided to suppress the property variation of a transistor due to light and moisture by including a second passivation layer including fluorine. CONSTITUTION: A source(S1) and a drain(D1) are connected to both ends of a channel layer(C1). A gate(G1) corresponds to the channel layer. A gate insulation layer(Gl1) is formed between the channel layer and the gate. A first passivation layer(P11,P12) covers the source, the drain, the gate, and the gate insulation layer, and the channel layer. The second passivation layer is formed on the first passivation layer and includes fluorine.