发明名称 |
STRAINED CMOS DEVICE, CIRCUIT AND METHOD OF FABRICATION |
摘要 |
A semiconductor device and fabrication method include a strained semiconductor layer having a strain in one axis. A long fin and a short fin are formed in the semiconductor layer such that the long fin has a strained length along the one axis. An n-type transistor is formed on the long fin, and a p-type transistor is formed on the at least one short fin. The strain in the n-type transistor improves performance.
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申请公布号 |
US2011175166(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US20100689339 |
申请日期 |
2010.01.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;SADANA DEVENDRA K.;SHAHIDI GHAVAM G. |
分类号 |
H01L27/12;H01L21/782 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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